2010. 6. 17 1/4 semiconductor technical data KU063N03Q n-ch trench mosfet revision no : 0 general description this trench mosfet has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristiscs. it is mainly suitable for dc/dc converter and battery pack.. features h v dss =30v, i d =16a. h drain to source on resistance. r ds(on) =6.3m ? (max.) @ v gs =10v r ds(on) =10.7m ? (max.) @ v gs =4.5v mosfet maximum ratings (ta=25 ? ? unless otherwise noted) b2 g h b1 1 4 5 8 a p d l t flp-8 0.20+0.1/-0.05 t p 1.27 millimeters dim a 4.85 0.2 + _ b1 3.94 0.2 + _ b2 6.02 0.3 + _ d 0.4 0.1 + _ g 0.15+0.1/-0.05 h 1.63 0.2 + _ l 0.65 0.2 + _ note1) surface mounted on 1 ? ? 1 ? fr4 board, t ? 10sec. 3 a ( ) k 5 g @ z x x x x 3 a ( ) k 5 g @ ku063n 03q pin connection (top view) characteristic symbol rating unit drain to source voltage v dss 30 v gate to source voltage v gss ? 20 v drain current dc@ta=25 ? (note 1) i d 16 a pulsed i dp 64 a drain power dissipation @ta=25 ? (note 1) p d 2.5 w maximum junction temperature t j 150 ? storage temperature range t stg -55~150 ? thermal resistance, junction to ambient (note 1) r thja 50 ? /w
2010. 6. 17 2/4 KU063N03Q revision no : 0 electrical characteristics (ta=25 ? ? ) unless otherwise noted characteristic symbol test condition min. typ. max. unit static drain to source breakdown voltage bv dss v gs =0v, i d =250 a 30 - - v drain cut-off current i dss v gs =0v, v ds =30v - - 1 a gate to source leakage current i gss v gs = ? 20v, v ds =0v - - ? 100 na gate to source threshold voltage v th v ds =v gs, i d =250 a 1.0 - 3.0 v drain to source on resistance r ds(on) v gs =10v, i d =16a (note2) - 5.3 6.3 m ? v gs =4.5v, i d =13a (note2) - 8.9 10.7 forward transconductance g fs v ds =5v, i d =16a (note2) - 52 - s dynamic input capaclitance c iss v ds =15v, v gs =0v, f=1mhz (note2) - 1751 - pf ouput capacitance c oss - 350 - reverse transfer capacitance c rss - 253 - gate resistance r g f=1mhz - 2.8 - ? total gate charge v gs =10v q g v ds =15v, v gs =10v, i d =16a (note2) - 39.7 - nc v gs =4.5v - 20.1 - gate to source charge q gs - 6.8 - gate to drain charge q gd - 8.2 - turn-on delay time t d(on) v ds =15v, v gs =10v i d =16a, r g =1.6 ? (note2) - 10.1 - ns turn-on rise time t r - 10.5 - turn-off delay time t d(off) - 31.2 - turn-off fall time t f - 11.0 - source to drain diode ratings source to drain forward voltage v sd v gs =0v, i s =16a (note2) - 0.8 1.2 v reverse recovery time t rr i s =16a, di/dt=100a/ s - 22.5 - ns reverse recovered charge q rr i s =16a, di/dt=100a/ s - 9.5 - nc note2) pulse test : pulse width ? 300 k , duty cycle ? 2%
2010. 6. 17 3/4 KU063N03Q revision no : 0 0 6 8 2 4 10 39 52 01326 65 drain current i d (a) drain to source on resistance r ds(on) ( ? ) v gs =4.5v v gs =10v fig2. r ds(on) - i d gate - source voltage v gs (v) fig1. i d - v ds drain to source voltage v ds (v) 0 0 0.5 26 52 13 39 65 1.0 1.5 2.0 2.5 3.0 13 39 0 0 26 65 52 34 12 5 fig3. i d - v gs fig6. i s - v sd drain current i d (a) drain current i d (a) fig4. r ds(on) - t j -75 -50 -25 25 50 75 175 150 125 100 0 reverse drain current i s (a) 10 -1 10 0 10 1 10 2 0.6 1.2 1.0 0.4 0.8 0.2 source to drain voltage v sd (v) normalized gate to source threshold voltage fig5. v th - t j -75 -50 -25 0.4 0.6 0.2 1.6 0.8 1.0 1.4 1.2 0.6 0.8 0.2 0.4 1.0 1.2 1.8 1.4 2.0 1.6 050100 25 175 150 125 75 normalized on resistance r ds(on) junction temperature tj ( ) c junction temperature tj ( ) c 5.0v 3.0v 3.5v 4.0v 4.5v v ds = v gs, i d = 250 a t j =25 c t j =-55 c t j =150 c t j =25 c t j =-55 c t j =150 c v gs =10v, i d =16a v gs =4.5v, i d =13a v ds =5v v gs =10v
2010. 6. 17 4/4 KU063N03Q revision no : 0 drain current i d (a) drain to source voltage v ds (v) fig10. safe operation area r ds(on) limit dc 100ms 10ms 1ms 100us c oss f=1mhz square wave pulse duration (sec) 10 1 10 0 10 0 10 1 10 2 10 3 10 -3 10 -2 10 -1 10 -4 fig11. transient thermal response curve 10 -1 10 -2 10 -3 normalized effective transient thermal resistance t 1 t 2 p dm r thja =60.5 c/w 0.02 0.1 0.01 0.2 0.5 0.05 drain to source voltage v ds (v) capacitance c (pf) fig8. c - v ds 25 10 15 0 5 20 30 gate to charge q g (nc) 0 10 6 2 4 8 60 15 30 45 075 fig9. q g - v gs gate to source voltage v gs (v) v ds = 15 v , i d = 16 a c rss c iss v gs = 10v single pulse t a = 25 c 10 1 10 -2 10 -2 10 -1 10 -1 10 0 10 0 10 1 10 1 10 2 10 2 10 2 10 3 10 4 single pulse gate to source voltage v gs (v) fig7. r ds(on) - v gs 6 024 8 12 10 0 4 20 12 16 8 drain to source on resistance r ds(on) (m ? ) t j =150 c i d =16a t j =25 c
|
